- 您现在的位置：买卖IC网 > Sheet目录492 > NTP75N06 (ON Semiconductor)MOSFET N-CH 60V 75A TO220AB
NTP75N06, NTB75N06,
NTBV75N06
Power MOSFET
75 Amps, 60 Volts, N ? Channel
TO ? 220 and D 2 PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? These Devices are Pb ? Free and are RoHS Compliant
? NTBV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
http://onsemi.com
75 AMPERES, 60 VOLTS
R DS(on) = 9.5 m W
N ? Channel
D
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
S
MARKING
DIAGRAMS
4
Rating
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 10 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? Repetitive (t p v 10 ms)
Symbol
V DSS
V DGR
V GS
V GS
Value
60
60
" 20
" 30
Unit
Vdc
Vdc
Vdc
4
TO ? 220
CASE 221A
STYLE 5
Drain
75N06
AYWW
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C
I D
I D
I DM
P D
75
50
225
214
1.4
2.4
Adc
Apk
W
W/ ° C
W
1
2
3
1
Gate
2
Drain
4
Drain
3
Source
Operating and Storage Temperature Range
T J , T stg
? 55 to
+175
° C
4
D 2 PAK
75N06
1
Gate
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 50 Vdc, V GS = 10 Vdc, L = 0.3 mH
I L(pk) = 75 A, V DS = 60 Vdc)
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
E AS
R q JC
R q JA
T L
844
0.7
62.5
260
mJ
° C/W
° C
1
2
3
75N06
A
Y
WW
CASE 418B AYWW
STYLE 2
2
Drain
= Device Code
= Assembly Location
= Year
= Work Week
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
December, 2012 ? Rev. 3
1
Publication Order Number:
NTP75N06/D
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NTP90N02G
MOSFET N-CH 24V 90A TO220AB
NTQD6866R2G
MOSFET 2N-CH 20V 4.7A 8TSSOP
NTQD6968N
MOSFET 2N-CH 20V 6.2A 8TSSOP
NTQS6463R2
MOSFET P-CH 20V 6.8A 8-TSSOP
NTR0202PLT1
MOSFET P-CH 20V 400MA SOT-23
NTR1P02LT3G
MOSFET P-CH 20V 1.3A SOT23-3
NTR1P02T1
MOSFET P-CH 20V 1A SOT-23
NTR2101PT1G
MOSFET P-CH 8V 3.7A SOT-23
相关代理商/技术参数
NTP75N06/D
制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 75 Amps， 60 Volts
NTP75N06D
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET
NTP75N06G
功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTP75N06G
制造商:ON Semiconductor 功能描述:MOSFET N
NTP75N06G
制造商:ON Semiconductor 功能描述:MOSFET
NTP75N06L
功能描述:MOSFET N-CH 60V 75A TO-220AB RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTP75N06L/D
制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 75 Amps， 60 Volts， Logic Level
NTP7N40/D
制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 7 Amps， 400 Volts